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| MMBT2369LT1G, MMBT2369ALT1G Switching Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Symbol VCEO VCES VCBO VEBO IC Value 15 40 40 4.5 200 Unit Vdc Vdc Vdc Vdc mAdc 1 Symbol PD Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C 2 1 BASE 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature SOT-23 CASE 318 STYLE 6 MARKING DIAGRAM xxx M G G 1 xxx = M1J or 1JA M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. RqJA PD RqJA TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. ORDERING INFORMATION Device MMBT2369LT1G MMBT2369ALT1G Package SOT-23 (Pb-Free) SOT-23 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2009 September, 2009 - Rev. 7 1 Publication Order Number: MMBT2369LT1/D MMBT2369LT1G, MMBT2369ALT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 3) (IC = 10 mAdc, IB = 0) Collector -Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) Collector -Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150C) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc, TA = -55C) (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector -Emitter Saturation Voltage (Note 3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Base -Emitter Saturation Voltage (Note 3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = -55C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Small Signal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Storage Time (IB1 = IB2 = IC = 10 mAdc) Turn-On Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) Turn-Off Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ts ton toff - - - 5.0 8.0 10 13 12 18 ns ns ns Cobo hfe - 5.0 - - 4.0 - pF - MMBT2369 MMBT2369A MMBT2369A MMBT2369A MMBT2369A MMBT2369 MMBT2369A MMBT2369 MMBT2369A MMBT2369A MMBT2369A MMBT2369A MMBT2369/A MMBT2369A MMBT2369A MMBT2369A hFE 40 - 40 20 30 20 20 - - - - - 0.7 - - - - - - - - - - - - - - - - - - - 120 120 - - - - - 0.25 0.20 0.30 0.25 0.50 0.85 1.02 1.15 1.60 - MMBT2369A V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 15 40 40 4.5 - - - - - - - - - - - - - - 0.4 30 0.4 Vdc Vdc Vdc Vdc mAdc Symbol Min Typ Max Unit ICES mAdc VCE(sat) Vdc VBE(sat) Vdc http://onsemi.com 2 MMBT2369LT1G, MMBT2369ALT1G +10.6 V 0 -1.5 V t1 3V 270 W +10.8 V 3.3 k Cs* < 4 pF -2 V 0 < 1 ns 1k Cs* < 12 pF t1 10 V 95 W < 1 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% *Total shunt capacitance of test jig and connectors. Figure 1. ton Circuit - 10 mA Figure 2. ton Circuit - 100 mA +10.75 V 0 -9.15 V t1 270 W +11.4 V 0 -8.6 V t1 10 V 95 W < 1 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% 3.3 k Cs* < 4 pF < 1 ns PULSE WIDTH (t1) BETWEEN 10 AND 500 ms DUTY CYCLE = 2% 1k 1N916 Cs* < 12 pF *Total shunt capacitance of test jig and connectors. Figure 3. toff Circuit - 10 mA Figure 4. toff Circuit - 100 mA TURN-ON WAVEFORMS Vin 0 Vout ton 10% 90% Vin 3.3 kW 3.3 k 0.0023 mF 0.005 mF VBB + 0.1 mF 50 W 0.0023 mF 0.005 mF 0.1 mF +V =3V - CC 220 W 0.1 mF Vout TO OSCILLOSCOPE INPUT IMPEDANCE = 50 W RISE TIME = 1 ns TURN-OFF WAVEFORMS 0 Vin Vout toff 10% 90% VBB = +12 V Vin = -15 V PULSE GENERATOR Vin RISE TIME < 1 ns SOURCE IMPEDANCE = 50 W PW 300 ns DUTY CYCLE < 2% 50 W Figure 5. Turn-On and Turn-Off Time Test Circuit http://onsemi.com 3 MMBT2369LT1G, MMBT2369ALT1G 6 5 4 CAPACITANCE (pF) 3 Cib Cob TJ = 25C LIMIT TYPICAL SWITCHING TIMES (nsec) 100 50 tr (VCC = 3 V) tf tr 10 5 ts VCC = 10 V F = 10 VCC = 10 V VOB = 2 V 20 2 td 1 0.1 2 0.2 0.5 1.0 2.0 REVERSE BIAS (VOLTS) 5.0 10 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 6. Junction Capacitance Variations Figure 7. Typical Switching Times C < COPT C COPT TIME C=0 +6 V 0 -4 V < 1 ns t1 10 V 980 500 Cs* < 3 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% Figure 8. Turn-Off Waveform Figure 9. Storage Time Equivalent Test Circuit VCE , MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C IC = 3 mA 0.6 IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA 0.8 0.4 0.2 0.02 0.05 0.1 0.2 0.5 1 IB, BASE CURRENT (mA) 2 5 10 20 Figure 10. Maximum Collector Saturation Voltage Characteristics http://onsemi.com 4 MMBT2369LT1G, MMBT2369ALT1G 200 hFE, MINIMUM DC CURRENT GAIN TJ = 125C VCE = 1 V 100 75C 25C TJ = 25C and 75C -15C 50 -55C 20 1 2 5 10 IC, COLLECTOR CURRENT (mA) 20 50 100 Figure 11. Minimum Current Gain Characteristics 1.4 V(sat) , SATURATION VOLTAGE (VOLTS) 1.2 1.0 0.8 0.6 0.4 0.2 F = 10 TJ = 25C MAX VBE(sat) MIN VBE(sat) MAX VCE(sat) 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 12. Saturation Voltage Limits http://onsemi.com 5 MMBT2369LT1G, MMBT2369ALT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 MMBT2369LT1/D |
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